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Selected Media & Publications

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Steve is a frequent speaker on topics such as energy storage, sustainable manufacturing, machine learning for energy applications, and the intersection of research and policy.

Selected Media

US National Laboratory leaders target next generation of stationary storage technologies         
Energy Storage News, September 16, 2022         
Read more about next generation of stationary storage technologies

US needs to ‘leapfrog’ to next-gen technologies for energy storage         
Energy Storage News, September 7, 2022         
Read more about ‘leapfrog’ to next gen technologies

Steve Eglash named director of SLAC's Applied Energy Division         
Stanford News, July 18, 2019         
Read more about Steve Eglash's new position

Progress Toward Safe and Reliable AI         
The Stanford AI Lab Blog, May 2, 2019         
Read more about progress toward safe and reliable AI

Why we need to look inside the black box of AI         
Interviewed in CMO from IDG, July 16, 2018         
Read more about why we need to look inside the black box of AI

Discussion on the Internet of Things on Future Talk TV with colleagues Phil Levis and Keith Winstein         
Future Talk, April 29, 2017         
Watch video about the internet of things

Selected Publications

Eglash, Steve, in U.S. DOE. 2022. Foundational Science for Biopreparedness and Response: Report from the March 2022 Roundtable. U.S. Department of Energy Office of Science. DOI: 10.2172/1868508         
Learn more about the report from the March 2022 roundtable

Eglash, Steve, in U.S. DOE. 2022. U.S. Department of Energy National Virtual Biotechnology Laboratory: Technical Report. U.S. Department of Energy Office of Science. DOI: 10.2172/1871217         
View the technical report (PDF)

S. Eglash and S. Rizk, "Discovery and application of exemplary models of innovation," MRS Bulletin, June 2016.         
View discovery and application of exemplary models of innovation (PDF)

Eglash, S. J.; Choi, H. K., InAsSb/AlAsSb Double-Heterostructure Diode-Lasers Emitting at 4 µm. Applied Physics Letters 1994, 64, (7), 833-835.   
Learn more about InAsSb/AlAsSb double-heterostructure diode-lasers emitting at 4 µm

Brown, E. R.; Eglash, S. J.; Turner, G. W.; Parker, C. D.; Pantano, J. V.; Calawa, D. R., Effect of Lattice-Mismatched Growth on InAs/AlSb Resonant-Tunneling Diodes. IEEE Transactions on Electron Devices 1994, 41, 879-882.    
Learn more about the effect of lattice-mismatched growth on InAs/AlSb resonant-tunneling diodes

Eglash, S. J.; Choi, H. K., Efficient GaInAsSb/AlGaAsSb Diode-Lasers Emitting at 2.29- µm. Applied Physics Letters 1990, 57, (13), 1292-1294.    
Learn more about efficient GaInAsSb/AlGaAsSb diode-lasers emitting at 2.29- µm

West, L. C.; Eglash, S. J., 1st Observation of an Extremely Large-Dipole Infrared Transition within the Conduction-Band of a Gas Quantum Well. Applied Physics Letters 1985, 46, (12), 1156-1158.     
Learn more about the 1st observation of an extremely large-dipole infrared transition